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 RB751SL — Schottky Barrier Diodes ? 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com RB751SL Rev. A1 2 Typical Performance Characteristics Figure 1. Forward Current Characteristics Figure 2. Reverse Leakage Current Figure 3. Junction Capacitance Figure 4. Power Derating 1 10 100 0.2 0.4 0.6 0.8 1.0 TJ=125 oC TJ=75 oC TJ=25 oC Forward Voltage Drop, VF[V] Forward Current, I F [mA] 10 20 30 10 100 1000 10000 100000 TJ=125 oC TJ=25 oC Reverse Current, I R [nA] Reverse Voltage, VR[V] TJ=75 oC 0246810 1.0 1.3 1.5 1.8 2.0 2.3 2.5 2.8 3.0 f=1mhz Juntion Capacitance, C J [pF] Reverse Voltage, VR[V] 0 25 50 75 100 125 150 0 50 100 150 200 250 300 Power Dissipation, [mW] Ambient Temperature, Ta[oC] |